mjd45h11 ? pnp epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com mjd45h11 rev. c3 1 april 2010 mjd45h11 pnp epitaxial silicon transistor applications ? general purpose power and switching such as output or driver stages in applications ? d-pak for surface mount applications features ? load formed for surface mount application (no suffix) ? straight lead (i-pak: ?-i? suffix) ? electrically similar to popular mje45h ? fast switching speeds ? low collector emitter saturation voltage absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter value units v ceo collector-emitter voltage - 80 v v ebo emitter-base voltage - 5 v i c collector current (dc) - 8 a i cp collector current (pulse) - 16 a p c collector dissipation (t c =25 c) 20 w collector dissipation (t a =25 c) 1.75 w t j junction temperature 150 c t stg storage temperature - 55 to +150 c symbol parameter test condition min. typ. max. units v ceo (sus) *collector-emitter sustaining voltage i c = - 30ma, i b = 0 - 80 v i ceo collector cut-off current v ce = - 80v, i b = 0 - 10 a i ebo emitter cut-off current v be = - 5v, i c = 0 - 50 a h fe *dc current gain v ce = - 1v, i c = - 2a v ce = - 1v, i c = - 4a 60 40 v ce (sat) *collector-emitter saturation voltage i c = - 8a, i b = - 0.4a - 1 v v be (on) *base-emitter saturation voltage i c = - 8a, i b = - 0.8a - 1.5 v f t current gain bandwidth product v ce = - 10a, i c = - 0.5a 40 mhz c ob collector capacitance v cb = - 10v, f = 1mhz 230 pf t on turn on time i c = - 5a i b1 = - i b2 = - 0.5a 135 ns t stg storage time 500 ns t f fall time 100 ns 1.base 2.collector 3.emitter d-pak i-pak 11
mjd45h11 ? pnp epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com mjd45h11 rev. c3 2 typical performance characteristics figure 1. dc current gain figure 2. safe operating area figure 3. power derating vs t c figure 4. power derating vs t a -0.01 -0.1 -1 -10 1 10 100 1000 v ce = -1v h fe , dc current gain i c [a], collector current -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 5 m s 1 0 0 s 5 0 0 s 1 m s d c i cp (max) i c (max) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 5 10 15 20 25 p c [w], power dissipation t c [ o c], case temperature 0 25 50 75 100 125 150 175 0 1 2 3 4 p c [w], power dissipation t a [ o c], case temperature
mjd45h11 ? pnp epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com mjd45h11 rev. c3 3 physical dimension 6.60 0.20 2.30 0.1 0 0.50 0.1 0 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.1 0 1.02 0.2 0 2.30 0.2 0 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pak dimensions in millimeters
mjd45h11 ? pnp epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com mjd45h11 rev. c3 4 physical dimension (continued) 6.60 0.20 0.76 0.10 max0.96 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] 0.60 0.20 0.80 0.10 1.80 0.20 9.30 0.30 16.10 0.30 6.10 0.20 0.70 0.20 5.34 0.20 0.50 0.10 0.50 0.1 0 2.30 0.20 (0.50) (0.50) (4.34) i-pak dimensions in millimeters
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